Doped Silicon Nanocrystal Plasmonics

Longwave plasmonics on doped silicon and silicides.

The realization of plasmo-electronic integrated circuits in a silicon chip will be enabled by two new plasmonic materials that are proposed and modeled in this article. The first is ion-implanted Si (n-type or p-type) at the surface of an intrinsic Si chip. The second is a thin-layer silicide such as Pd(2)Si, NiSi, PtSi(2) WSi(2) or CoSi(2) formed at the Si chip surface. For doping concentratio...

Effective third-order susceptibility of silicon-nanocrystal-doped silica.

We derive approximate analytic expressions for the effective susceptibility tensor of a nonlinear composite, consisting of silicon nanocrystals embedded in fused silica. Two types of composites are considered: by assuming that (i) the crystallographic axes of different crystallites are the same, or (ii) crystallites are oriented randomly. In the first case, the tensor properties of the effectiv...

Silicon optical nanocrystal memory

We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased ele...

Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates

Heavily doped semiconductor nanocrystal quantum dots.

Doping of semiconductors by impurity atoms enabled their widespread technological application in microelectronics and optoelectronics. However, doping has proven elusive for strongly confined colloidal semiconductor nanocrystals because of the synthetic challenge of how to introduce single impurities, as well as a lack of fundamental understanding of this heavily doped limit under strong quantu...